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參數資料
| 型號： | IS41C1664-30T |
| 英文描述： | 64K x 16 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 64K的× 16位動態隨機存儲器與江戶頁面模式 |
| 文件頁數： | 9/21頁 |
| 文件大小： | 219K |
| 代理商： | IS41C1664-30T |
IC41C1664
IC41LV1664
Integrated Circuit Solution Inc.
DR033-0A 11/15/2001
9
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-25
30
35
40
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max. Units
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
(24)
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Refresh Period (256 Cycles)
Transition Time (Rise or Fall)
(2, 3)
15
—
15
—
15
—
15
—
ns
t
OEH
4
—
4
—
4
—
4
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
5
65
34
—
—
—
—
0
5
85
46
—
—
—
—
0
5
95
51
—
—
—
—
0
5
—
—
—
—
ns
ns
ns
ns
105
56
t
CWD
t
AWD
t
PC
17
21
15
—
—
—
25
32
20
—
—
—
26
34
23
—
—
—
27
36
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
25
—
37
10K
14
—
30
—
42
10K
18
—
35
—
49
10K
20
—
40
—
52
10K
22
—
ns
ns
ns
t
COH
t
OFF
5
3
—
15
5
3
—
15
5
3
—
15
5
3
—
15
ns
ns
t
WHZ
t
CLCH
3
4
15
—
3
9
15
—
3
10
15
—
3
11
15
—
ns
ns
t
CSR
t
CHR
t
ORD
5
7
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
t
REF
t
T
—
1
4
50
—
1
4
50
4
50
4
50
ms
ns
1
1
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V ±10%)
One TTL Load and 50 pF (Vcc = 3.3V ±10%)
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V (Vcc = 5.0V ±10%);
V
IH
= 2.0V, V
IL
= 0.8V (Vcc = 3.3V ±10%)
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V (Vcc = 5V ±10%, 3.3V ±10%)
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相關代理商/技術參數 |
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| IS41C4100 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C4100-60J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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