- 您現在的位置：買賣IC網 > PDF目錄360981 > IS41C4100-35T 1Mx4 bit Dynamic RAM with EDO Page Mode PDF資料下載
參數資料
| 型號： | IS41C4100-35T |
| 英文描述： | 1Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 1Mx4位動態RAM與江戶頁面模式 |
| 文件頁數： | 6/21頁 |
| 文件大小： | 250K |
| 代理商： | IS41C4100-35T |
IC41C4100
IC41LV4100
6
Integrated Circuit Solution Inc.
DR027-0A 09/05/2001
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
–40 to +85
–55 to +125
V
3.3V
5V
3.3V
V
CC
Supply Voltage
V
I
OUT
P
D
T
A
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operationg Temperature
Storage Temperature
mA
W
°C
°C
°C
T
STG
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
5.0
3.3
—
—
—
—
—
—
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
°C
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
相關PDF資料 |
PDF描述 |
|---|---|
| IS41C44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41C4100-60J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C44002-50J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
發布緊急采購，3分鐘左右您將得到回復。