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參數(shù)資料
型號: IS41C82002-60JI
英文描述: x8 EDO Page Mode DRAM
中文描述: x8 EDO公司頁面模式的DRAM
文件頁數(shù): 4/19頁
文件大小: 157K
代理商: IS41C82002-60JI
4
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. D
06/24/01
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
1.0 to +7.0
0.5 to +4.6
V
3.3V
V
CC
Supply Voltage
5V
1.0 to +7.0
0.5 to +4.6
V
3.3V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
°
C
T
STG
Storage Temperature
55 to +125
°
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
5.0
3.3
5.5
3.6
V
3.3V
V
IH
Input High Voltage
5V
2.4
2.0
V
CC
+ 1.0
V
CC
+ 0.3
V
3.3V
V
IL
Input Low Voltage
5V
1.0
0.3
0.8
0.8
V
3.3V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
0
70
85
°
C
°
C
-40
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz.
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