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參數資料
| 型號： | IS41LV16100A-60T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-50/44 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 144K |
| 代理商： | IS41LV16100A-60T |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/02/05
1
IS41LV16100A
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
TTL compatible inputs and outputs; tristate I/O
Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
—
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply:
— 3.3V ± 10% (IS41LV16100A)
Byte Write and Byte Read operation via two
CAS
Industrial Temperature Range: -40
o
C to +85
o
C
Lead-free available
DESCRIPTION
The
ISSI
IS41LV16100A is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word.
These features make the IS41LV16100A ideally suited for
high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral
applications.
The IS41LV16100A is packaged in a 42-pin 400-mil SOJ
and 400-mil 50- (44-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-50
-60
Unit
Max.
RAS
Access Time (t
RAC
)
50
60
ns
Max.
CAS
Access Time (t
CAC
)
14
15
ns
Max. Column Address Access Time (t
AA
)
25
30
ns
Min. EDO Page Mode Cycle Time (t
PC
)
30
40
ns
Min. Read/Write Cycle Time (t
RC
)
85
110
ns
PIN CONFIGURATIONS
50(44)-Pin TSOP (Type II)
42-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
V
DD
Power
GND
Ground
NC
No Connection
MARCH 2005
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100A-60TI | RES 0805 1/8W 5% 2.4K |
| IS41LV16100A-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100 | 1M x 16 DRAM With EDO Page Mode(3.3V,1Mx16帶擴展數據輸出頁模式動態RAM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41LV16100A-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-60TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B-50K | 功能描述:動態隨機存取存儲器 16M 1Mx16 50ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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