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參數(shù)資料
型號(hào)： IS41LV16256-60K
英文描述： 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述： 256K × 16（4兆位）的動(dòng)態(tài)與江戶(hù)頁(yè)面模式內(nèi)存
文件頁(yè)數(shù)： 6/20頁(yè)
文件大小： 215K
代理商： IS41LV16256-60K
IS41C16256
IS41LV16256
6
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
Any input 0V < V
IN
< Vcc
Other inputs not under test = 0V
–10
10
μA
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
0V < V
OUT
< Vcc
–10
10
μA
V
OH
Output High Voltage Level
I
OH
= –2.5 mA
2.4
—
V
V
OL
Output Low Voltage Level
I
OL
=+2.1mA
—
0.4
V
I
CC
1
Standby Current: TTL
RAS
,
LCAS
,
UCAS
> V
IH
Commerical
Industrial
Commerical 3.3V
Industrial
5V
5V
—
—
—
—
2
3
1
2
mA
3.3V
I
CC
2
Standby Current: CMOS
RAS
,
LCAS
,
UCAS
> V
CC
– 0.2V
5V
3.3V
—
—
1
mA
0.5
I
CC
3
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
,
Address Cycling, t
RC
= t
RC
(min.)
-25
-35
-50
-60
—
—
—
—
260
230
180
170
mA
I
CC
4
Operating Current:
EDO Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
LCAS
,
UCAS
,
Cycling t
PC
= t
PC
(min.)
-25
-35
-50
-60
—
—
—
—
250
220
170
160
mA
I
CC
5
Refresh Current:
RAS
-Only
(2,3)
Average Power Supply Current
RAS
Cycling,
LCAS
,
UCAS
> V
IH
t
RC
= t
RC
(min.)
-25
-35
-50
-60
—
—
—
—
260
230
180
170
mA
I
CC
6
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
Cycling
t
RC
= t
RC
(min.)
-25
-35
-50
-60
—
—
—
—
260
230
180
170
mA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
相關(guān)PDF資料
PDF描述
IS41LV16256-60T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25K 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25KI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25TI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV16256-60KI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60T 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60TI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256B 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256B-35K 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線(xiàn)寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪(fǎng)問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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