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參數(shù)資料
型號: IS41LV16256-60KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, MS-027, SOJ-40
文件頁數(shù): 1/19頁
文件大小: 153K
代理商: IS41LV16256-60KI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
1
ISSI
reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS41C16256
IS41LV16256
256K x 16
WITH EDO PAGE MODE
ISSI
JUNE 2000
FEATURES
TTL compatible inputs and outputs
Refresh Interval: 512 cycles/8 ms
Refresh Mode :
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply
5V ± 10% (IS41C16256)
3.3V ± 10% (IS41LV16256)
Byte Write and Byte Read operation via two
CAS
Extended Temperature Range -30
o
C to 85
o
C
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ISSI
IS41C16256 and IS41LV16256 are 262,144 x 16-bit
high-performance CMOS Dynamic Random Access Memory. Both
products offer accelerated cycle access EDO Page Mode. EDO
Page Mode allows 512 random accesses within a single row with
access cycle time as short as 10ns per 16-bit word. The Byte Write
control, of upper and lower byte, makes the IS41C16256 and
IS41LV16256 deal for use n 16 and 32-bit wide data bus systems.
These features make the IS41C16256 and IS41LV1626 ideally
suited for high
band-width
graphics,
digital signal processing,
high-performance computing systems, and peripheral applications.
The IS41C16256 and
IS41LV16256
are packaged in 40-pin
400-mil SOJ and TSOP (Type II).
(4-MBIT) DYNAMIC RAM
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. EDO Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
10
18
12
60
-50
50
14
25
20
90
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
PIN CONFIGURATIONS
40-Pin TSOP (Type II)
40-Pin SOJ
PIN DESCRIPTIONS
A0-A8
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
相關PDF資料
PDF描述
IS41LV16256-60T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60TI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256 256K x 16 DRAM With EDO Page Mode(3.3V,256K x 16 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM)
IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
相關代理商/技術參數(shù)
參數(shù)描述
IS41LV16256-60T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256-60TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256B-35K 功能描述:動態(tài)隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS41LV16256B-35KL 功能描述:動態(tài)隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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