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參數(shù)資料
| 型號： | IS41LV16257-60K |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充滿活力和快速頁面模式內(nèi)存 |
| 文件頁數(shù)： | 2/20頁 |
| 文件大小： | 760K |
| 代理商： | IS41LV16257-60K |
IC41C16257/IC41C16257S
IC41LV16257/IC41LV16257S
2
Integrated Circuit Solution Inc.
DR021-0A 08/11/2001
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
Fast access and cycle time
TTL compatible inputs and outputs
Refresh Interval: 512 cycles/8 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR), Hidden
Self Refresh Mode: 512 cycles/64 ms (S version
only)
JEDEC standard pinout
Single power supply:
— 5V ± 10% (IC41C16257)
— 3.3V ± 10% (IC41LV16257)
Byte Write and Byte Read operation via
two
CAS
Available in 40-pin SOJ and TSOP-2
DESCRIPTION
The
ICSI
IC41C16257 and the IC41LV16257 are 262,144
x 16-bit high-performance CMOS Dynamic Random Access
Memory. Fast Page Mode allows 512 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
byte, makes these devices ideal for use in 16-, 32-bit wide
data bus systems.
These features make the IC41C16257 and the IC41LV16257
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IC41C16257 and the IC41LV16257 are packaged in a
40-pin, 400mil SOJ and TSOP-2.
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
PIN DESCRIPTIONS
A0-A8
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address
Strobe
LCAS
Lower Column Address
Strobe
Vcc
Power
GND
Ground
NC
No Connection
40-Pin SOJ
PIN CONFIGURATIONS
40-Pin TSOP-2
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. Fast Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
10
18
12
60
-50
50
14
25
20
90
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV16257S-60K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV1665 | 64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV1665-40K | 64K x16 bit Dynamic RAM with Fast Page Mode |
| IS41LV44002-50JI | x4 EDO Page Mode DRAM |
| IS41LV44002-50T | x4 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16257-60KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B-35K | 功能描述:動態(tài)隨機(jī)存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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