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參數資料
型號: IS41LV1665
英文描述: 64K x16 bit Dynamic RAM with Fast Page Mode
中文描述: 64K的x16位動態隨機存儲器和快速頁面模式
文件頁數: 6/19頁
文件大小: 388K
代理商: IS41LV1665
IC41C1665
IC41LV1665
6
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
-40 to +85
–55 to +125
V
V
V
V
3.3V
5V
3.3V
V
CC
Supply Voltage
I
OUT
P
D
T
A
Output Current
Power DICSIpation
Operation Temperature
mA
W
o
C
o
C
o
C
Com.
Ind.
T
STG
Storage Temperature
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
3.3V
5V
3.3V
5V
3.3V
Com.
Ind.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
5.0
3.3
5.5
3.6
V
V
V
V
V
V
o
C
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
IL
Input Low Voltage
T
A
Ambient Temperature
o
C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A7
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O15
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
o
C, f = 1 MHz, V
CC
= 5.0V + 10%, or V
CC
= 3.3V + 10%.
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相關代理商/技術參數
參數描述
IS41LV1665-40K 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x16 bit Dynamic RAM with Fast Page Mode
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IS41LV32256-28TQ 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
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