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參數資料
| 型號： | IS41LV32256 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32帶擴展數據輸出動態RAM) |
| 中文描述： | 256K × 32（8兆位），江戶內存3.3伏，100/83/66兆赫（3.3伏，100/83/66兆赫，256K × 32帶擴展數據輸出動態內存） |
| 文件頁數： | 1/19頁 |
| 文件大小： | 156K |
| 代理商： | IS41LV32256 |
Integrated Silicon Solution, Inc.
Rev. A
09/29/00
1
IS41LV32256
256K x 32
3.3V, 100/83/66 MHz
ISSI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
FEATURES
262,144-word by 32-bit organization
Single +3.3V ± 0.3V power supply
Four
CAS
inputs for Byte Write and Byte Read
control
Refresh modes:
RAS
-Only,
CAS
-Before-
RAS
(CBR),
and Hidden
512-cycle refresh in 8 ms
Fast Page Mode with Extended Data Out
100-pin PQFP, TQFP package
DESCRIPTION
The
ISSI
IS41LV32256 is organized in a 262,122 x 32-bit
CMOS Dynamic Random Access Memory. Four
CAS
signals
facilitate execution of Byte Read and Byte Write operations.
A very fast EDO cycle time of 10 ns allows an operating
frequency of 100 MHz and makes the IS41LV32256 an ideal
frame buffer memory for graphics applications.
The IS41LV32256 is compatible with JEDEC standard
SGRAMs. This 8-Mbit EDO memory offers a significantly
lower latency and a faster memory cycle than the SGRAM.
ISSI
's IS41LV32256 3.3V 256K x 32 device is pin/voltage
compatible with all standard SGRAM parts.
The IS41LV32256 is available in a 100-pin PQFP and TQFP
package.
(8-Mbit) EDO DYNAMIC RAM
KEY TIMING PARAMETERS
Parameter
-28
-30
-35
Unit
Max.
RAS
Access Time (t
RAC
)
28
30
35
ns
Max.
CAS
Access Time (t
CAC
)
9
9
10
ns
Max. Column Address Access Time (t
AA
)
15
16
18
ns
Max.
OE
Access Time (t
OE
)
9
9
10
ns
Min. Read/Write Cycle Time (t
RC
)
48
53
60
ns
Min. EDO Cycle Time (t
PC
)
12
12
15
ns
SEPTEMBER 2000
相關PDF資料 |
PDF描述 |
|---|---|
| IS42G32256-10PQ | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42G32256-7PQ | POT 10K OHM 9MM VERT NO BUSHING |
| IS42G32256-8PQ | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42G32256 | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42S16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41LV32256-28PQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-30PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EDO Page Mode DRAM |
| IS41LV32256-30TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-35PQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
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