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參數(shù)資料
| 型號： | IS41LV44002-60J |
| 英文描述： | x4 EDO Page Mode DRAM |
| 中文描述： | x4 EDO公司頁面模式的DRAM |
| 文件頁數(shù)： | 2/19頁 |
| 文件大小： | 157K |
| 代理商： | IS41LV44002-60J |
2
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. D
06/24/01
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
FUNCTIONAL BLOCK DIAGRAM
OE
WE
CAS
CAS
WE
O
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
MEMORY ARRAY
4,194,304 x 4
R
D
CAS
CONTROL
LOGIC
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
I/O0-I/O3
RAS
R
A0-A10(A11)
RAS
CLOCK
GENERATOR
REFRESH
COUNTER
ADDRESS
BUFFERS
TRUTH TABLE
Function
Standby
Read
Write: Word (Early Write)
Read-Write
EDO Page-Mode Read
RAS
H
L
L
L
L
L
L
L
L
L
L
→
H
→
L
L
→
H
→
L
L
H
→
L
CAS
H
L
L
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
WE
X
H
L
H
→
L
H
H
L
L
H
→
L
H
→
L
H
L
X
X
OE
X
L
X
L
→
H
L
L
X
X
L
→
H
L
→
H
L
X
X
X
Address t
R
/t
C
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
D
OUT
D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read
Write
(1)
EDO Page-Mode Write
EDO Page-Mode
Read-Write
Hidden Refresh
RAS
-Only Refresh
CBR Refresh
Note:
1. EARLY WRITE only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV44002-60JI | x4 EDO Page Mode DRAM |
| IS41LV44002-60T | x4 EDO Page Mode DRAM |
| IS41LV44002-60TI | x4 EDO Page Mode DRAM |
| IS41LV44004-50J | x4 EDO Page Mode DRAM |
| IS41LV44004-50JI | x4 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV44002-60JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-60T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-60TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002A | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002AS(L) | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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