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參數(shù)資料
| 型號(hào)： | IS41LV44002A |
| 英文描述： | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4（16兆）動(dòng)態(tài)與江戶頁面模式內(nèi)存 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 297K |
| 代理商： | IS41LV44002A |
Integrated Circuit Solution Inc.
DR026-0A 09/04/2001
7
IC41C44002A/IC41C44002AS(L)
IC41LV44002A/IC41LV44002AS(L)
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-
50
-
60
Symbol
Parameter
Min.
Max.
50
14
25
10K
10K
37
25
15
12
Min.
Max.
60
15
30
10K
10K
45
30
15
15
Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
RAD
t
RAL
t
RSH
t
RHCP
t
CLZ
t
CRP
t
OD
t
OE
t
OED
t
OEHC
t
OEP
t
RCS
t
RRH
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(23)
CAS
Precharge Time
(9)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
Hold Time
RAS
Hold Time from
CAS
Precharge
CAS
to Output in Low-Z
(15, 24)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 24)
Output Enable Time
(15, 16)
Output Enable Data Delay (Write)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
84
50
30
8
10
38
12
0
8
0
8
10
25
8
30
0
5
0
20
5
10
0
0
104
60
40
10
10
40
14
0
10
0
10
12
30
10
35
0
5
0
20
5
10
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
0
ns
t
WCH
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
8
8
10
13
8
0
10
10
10
15
10
0
ns
ns
ns
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV44002AS(L) | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C44004 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41LV44002 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41LV44004 | 4Mx4 bit Dynamic RAM with EDO Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV44002AS(L) | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002B-50J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002B-50JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002B-50JL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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