- 您現在的位置：買賣IC網 > PDF目錄360981 > IS41LV44004 4Mx4 bit Dynamic RAM with EDO Page Mode PDF資料下載
參數資料
| 型號： | IS41LV44004 |
| 英文描述： | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 4Mx4位動態RAM與江戶頁面模式 |
| 文件頁數： | 4/20頁 |
| 文件大小： | 236K |
| 代理商： | IS41LV44004 |
IC41C4400x and IC41LV4400x Series
4
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002
Functional Description
The IC41C4400x and IC41LV4400x are CMOS DRAMs
optimized for high-speed bandwidth, low power
applications. During READ or WRITE cycles, each bit is
uniquely addressed through the 11 or 12 address bits.
These are entered 11 bits (A0-A10) at a time for the 2K
refresh device or 12 bits (A0-A11) at a time for the 4K
refresh device. The row address is latched by the Row
Address Strobe (
RAS
). The column address is latched by
the Column Address Strobe (
CAS
).
RAS
is used to latch
the first nine bits and
CAS
is used the latter ten bits.
Memory Cycle
A memory cycle is initiated by bring
RAS
LOW and it is
terminated by returning both
RAS
and
CAS
HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
RAS
time has expired. A new
cycle must not be initiated until the minimum precharge
time t
RP
, t
CP
has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of
CAS
or
OE
,
whichever occurs last, while holding
WE
HIGH. The
column address must be held for a minimum time specified
by t
AR
. Data Out becomes valid only when t
RAC
, t
AA
, t
CAC
and t
OEA
are all satisfied. As a result, the access time is
dependent on the timing relationships between these
parameters.
Write Cycle
A write cycle is initiated by the falling edge of
CAS
and
WE
,
whichever occurs last. The input data must be valid at or
before the falling edge of
CAS
or
WE
, whichever occurs
last.
Refresh Cycle
To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in each
64ms period. There are two ways to refresh the memory:
1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through A11)
with RAS at least once every 32 ms or 64ms respectively.
Any read, write, read-modify-write or RAS-only cycle
refreshes the addressed row.
2. Using a
CAS
-before-
RAS
refresh cycle.
CAS
-before-
RAS
refresh is activated by the falling edge of
RAS
,
while holding
CAS
LOW. In
CAS
-before-
RAS
refresh
cycle, an internal 9-bit counter provides the row ad-
dresses and the external address inputs are ignored.
CAS
-before-
RAS
is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power
-
On
After application of the V
CC
supply, an initial pause of
200 μs is required followed by a minimum of eight initial-
ization cycles (any combination of cycles containing a
RAS
signal).
During power-on, it is recommended that
RAS
track with
V
CC
or be held at a valid V
IH
to avoid current surges.
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100S-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-50TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41LV44004-50J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-50T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-50TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44004-60J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
發布緊急采購，3分鐘左右您將得到回復。