欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IS42LS32400A
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 16Meg × 8,8Meg x16
文件頁數: 55/66頁
文件大小: 556K
代理商: IS42LS32400A
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
55
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
OUT
a+1
D
OUT
b
D
OUT
b+1
COL a
BCOL b
CAS Latency - 3 (BANK n)
CAS Latency - 3 (BANK m)
t
RP - BANK n
t
RP - BANK m
RBANK n
BANK m
Page Active
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
READ with Burst of 4
Precharge
Internal States
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQM
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
IN
b
D
IN
b+1
D
IN
b+2
D
IN
b+3
COL a
BCOL b
CAS Latency - 3 (BANK n)
t
RP - BANK n
t
RP - BANK m
WRITE - AP
BANK n
WRITE - AP
BANK m
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
WRITE with Burst of 4
Write-Back
Internal States
Page Active
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by programming
the write burst mode bit
(M9)
in the mode register to a logic 1.
In this mode, all
WRITE
commands result in the access of a
single column location (burst of one), regardless of the
programmed burst length. READ commands access
columns according to the programmed burst length and
sequence, just as in the normal mode of operation (M9 = 0).
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another bank
while an access command with auto precharge enabled is
executing is not allowed by SDRAMs, unless the SDRAM
supports CONCURRENT AUTO PRECHARGE.
ISSI
SDRAMs support CONCURRENT AUTO PRECHARGE.
Four cases where CONCURRENT AUTO PRECHARGE
occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a READ on bank n, CAS
latency later. The PRECHARGE to bank n will begin
when the READ to bank m is registered.
2. Interrupted by a WRITE (with or without auto precharge):
A WRITE to bank m will interrupt a READ on bank n when
registered. DQM should be used two clocks prior to the
WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to
bank m is registered.
READ With Auto Precharge interrupted by a READ
READ With Auto Precharge interrupted by a WRITE
相關PDF資料
PDF描述
IS42LS32400A-10TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7B 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7BI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關代理商/技術參數
參數描述
IS42LS32400A-10B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10BI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
主站蜘蛛池模板: 辽阳县| 庐江县| 龙川县| 重庆市| 石城县| 远安县| 北安市| 镇宁| 涟源市| 游戏| 曲靖市| 平远县| 民和| 灵宝市| 庆阳市| 怀远县| 永州市| 邯郸市| 界首市| 蕉岭县| 白玉县| 朔州市| 梅河口市| 长武县| 桂平市| 旺苍县| 左贡县| 那曲县| 陕西省| 蒙山县| 凤山县| 招远市| 灌南县| 思南县| 安化县| 南陵县| 石渠县| 武乡县| 佛冈县| 棋牌| 大余县|