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| 型號(hào)： | IS42S16800B-75ETL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-54 |
| 文件頁(yè)數(shù)： | 1/60頁(yè) |
| 文件大小： | 585K |
| 代理商： | IS42S16800B-75ETL |
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IS42S81600B
IS42S16800B
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
05/01/06
1
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
ISSI
FEATURES
Clock frequency: 167, 143, 133 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Power supply
V
DD
IS42S81600B
3.3V
IS42S16800B
3.3V
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Auto Refresh (CBR)
Self Refresh with programmable refresh periods
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Industrial Temperature Availability
Lead-free Availability
V
DDQ
3.3V
3.3V
OVERVIEW
ISSI
's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock
input.The 128Mb SDRAM is organized as follows.
16Meg x 8, 8Meg x16
128-MBIT SYNCHRONOUS DRAM
MAY 2006
KEY TIMING PARAMETERS
Parameter
-6
-7
-75E
Unit
Clk Cycle Time
CAS
Latency = 3
CAS
Latency = 2
6
–
7
–
ns
ns
10
7.5
Clk Frequency
CAS
Latency = 3
CAS
Latency = 2
167
–
143
100
–
Mhz
Mhz
133
Access Time from Clock
CAS
Latency = 3
CAS
Latency = 2
5.4
–
5.4
6
–
6
ns
ns
IS42S81600B
4M x8x4 Banks
IS42S16800B
2M x16x4 Banks
54-pin TSOPII
54-pin TSOPII
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16800B-7T | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B-7TI | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B-7TLI | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-6T | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-6TL | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16800B-7T | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16800B-7TI | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16800B-7TI-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16800B7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16800B-7TL | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 143Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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