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參數(shù)資料
| 型號(hào)： | IS42S32400A-7TI |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁(yè)數(shù)： | 13/66頁(yè) |
| 文件大小： | 556K |
| 代理商： | IS42S32400A-7TI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
13
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
H
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
RAS
X
H
H
H
H
L
L
L
L
L
X
H
H
H
H
L
L
L
L
X
CAS
X
H
H
L
L
H
H
L
L
L
X
H
H
L
L
H
H
L
L
X
WE
X
H
L
H
L
H
L
H
L
L
X
H
L
H
L
H
L
H
L
X
Address
X
X
X
BA, CA, A10
A, CA, A10
BA, RA
A, A10
X
OC, BA1=L
OC, BA1=H
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
OC, BA
X
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF
MRS
EMRS
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF
MRS/EMRS
DESL
Action
Nop
Nop
Nop
ILLEGAL
(2)
ILLEGAL
(2)
Row activating
Nop
Auto refresh
Mode register set
Extended mode register set
Nop
Nop
Nop
Begin read
(3)
Begin write
(3)
ILLEGAL
(2)
Precharge/Precharge all banks
(
ILLEGAL
ILLEGAL
Continue burst to end to
Row active
Continue burst to end Row
Row active
Burst stop Row active
Terminate burst,
begin new read
(5)
Terminate burst,
begin write
(5, 6)
ILLEGAL
(2)
Terminate burst
Precharging
ILLEGAL
ILLEGAL
Continue burst to end
Write recovering
Continue burst to end
Write recovering
Burst stop Row active
Terminate burst, start read :
Determine AP
(5, 6)
Terminate burst, new write :
Determine AP
(5)
ILLEGAL
(2)
Terminate burst Precharging
(7)
ILLEGAL
ILLEGAL
Idle
Row Active
Read
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
H
H
H
L
BA, RA
BA, A10
ACT
PRE/PALL
L
L
H
L
L
X
L
L
X
H
L
X
X
OC, BA
X
REF
MRS/EMRS
DESL
Write
L
H
H
H
X
NOP
L
L
H
H
H
L
L
H
X
BA, CA, A10
BST
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
L
L
L
L
L
L
H
H
L
L
H
L
H
L
BA,
BA, A10
X
OC, BA
RA ACT
PRE/PALL
REF
MRS/EMRS
FUNCTIONAL TRUTH TABLE
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42LS32400A-10B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-10TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-7B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-7BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32400A-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S32400A-7TLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S32400B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6B | 制造商:Integrated Silicon Solution Inc 功能描述:IC SDRAM 128MBIT 166MHZ 90FBGA |
| IS42S32400B-6BL | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 4Mx32 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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