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參數資料
| 型號： | IS42S81600A-7TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數： | 1/65頁 |
| 文件大小： | 556K |
| 代理商： | IS42S81600A-7TLI |
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
ADVANCEDINFORMATION,Rev. 00A
08/01/02
Copyright 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS42S81600A, IS42LS81600A
IS42S16800A, IS42LS16800A
IS42S32400A, IS42LS32400A
ISSI
FEATURES
Clock frequency: 133 100, MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Power supply
VDD
VDDQ
IS42LS81600A
2.5V
1.8V (2.5V tolerant)
IS42LS16800A
2.5V
1.8V (2.5V tolerant)
IS42LS32400A
2.5V
1.8V (2.5V tolerant)
IS42S81600A
3.3V
IS42S16800A
3.3V
IS42S32400A
3.3V
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Extended Mode Register
Programmable Power Reduction Feature by
partial array activation during Self-Refresh
Auto Refresh (CBR)
Temp. Compensated Self Refresh.
Self Refresh with programmable refresh periods
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Industrial Temperature Availability
OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer
to the rising edge of the clock
input.The 128Mb SDARM is organized as follows.
16Meg x 8, 8Meg x16 & 4Meg x 32
128-MBIT SYNCHRONOUS DRAM
ADVANCED INFORMATION
AUGUST 2002
KEY TIMING PARAMETERS
Parameter
-7
-10
Unit
Clk Cycle Time
CAS Latency = 3
7
10
ns
CAS Latency = 2
10
ns
Clk Frequency
CAS Latency = 3
133
100
Mhz
CAS Latency = 2
100
Mhz
Access Time from Clock
CAS Latency = 3
5.4
7
ns
CAS Latency = 2
6
9
ns
Row to Column Delay Time (tRCD)
1518ns
Row Precharge Tim (tRP)
1518ns
IS42LS81600A
IS42LS16800A
IS42LS32400A
IS42S81600A
IS42S16800A
IS42S32400A
4M x8x4 Banks
2M x16x4 Banks
54pin TSOPII
54ball FBGA
90ball FBGA
54 pin TSOPII
86pin TSOPII
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42S81600AL-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S81600B-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600B-7T | 功能描述:動態隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S81600B-7TI | 功能描述:動態隨機存取存儲器 128M 16Mx8 143Mhz RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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