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參數(shù)資料
| 型號(hào)： | IS45S16100C1 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k字× 16位× 2銀行（16兆）同步動(dòng)態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/81頁(yè) |
| 文件大小： | 821K |
| 代理商： | IS45S16100C1 |
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IS45S16100C1
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/03/06
1
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
JANUARY 2006
FEATURES
Clock frequency: 143 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Two banks can be operated simultaneously and
independently
Dual internal bank controlled by A11
(bank select)
Single 3.3V power supply
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and
precharge command
Byte controlled by LDQM and UDQM
Automotive Temperature Range
Option A: 0
o
C to +70
o
C
Option A1: -40
o
C to +85
o
C
Packages: 400-mil 50-pin TSOP-II, 60-ball
fBGA
Lead-free package option
DESCRIPTION
ISSI
’s 16Mb Synchronous DRAM IS45S16100C1 is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
PIN CONFIGURATIONS
50-Pin TSOP (Type II)
PIN DESCRIPTIONS
A0-A11
Address Input
A0-A10
Row Address Input
A11
Bank Select Address
A0-A7
Column Address Input
DQ0 to DQ15
Data DQ
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
Write Enable
LDQM
Lower Bye, Input/Output Mask
UDQM
Upper Bye, Input/Output Mask
VDD
Power
GND
Ground
VDDQ
Power Supply for DQ Pin
GNDQ
Ground for DQ Pin
NC
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VDD
DQ0
DQ1
GNDQ
DQ2
DQ3
VDDQ
DQ4
DQ5
GNDQ
DQ6
DQ7
VDDQ
LDQM
WE
CAS
RAS
CS
A11
A10
A0
A1
A2
A3
VDD
GND
DQ15
IDQ14
GNDQ
DQ13
DQ12
VDDQ
DQ11
DQ10
GNDQ
DQ9
DQ8
VDDQ
NC
UDQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
GND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS45S16100C1-7BLA | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S16100C1-7BLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 64M (4Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7BLA1-TR | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16100C1-7TA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7TLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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