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參數資料
| 型號： | IS45S16800B |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 128兆位同步DRAM |
| 文件頁數： | 1/59頁 |
| 文件大小： | 593K |
| 代理商： | IS45S16800B |
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IS45S81600B
IS45S16800B
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/14/06
1
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
ISSI
FEATURES
Clock frequency: 143, 100 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Power supply
V
DD
IS45S81600B
3.3V
IS45S16800B
3.3V
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Auto Refresh (CBR)
Self Refresh with programmable refresh periods
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Automotive Temperature Range
Option A: 0
o
C to +70
o
C
Option A1: -40
o
C to +85
o
C
Lead-free Availability
V
DDQ
3.3V
3.3V
OVERVIEW
ISSI
's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock
input.The 128Mb SDRAM is organized as follows.
16Meg x 8, 8Meg x16
128-MBIT SYNCHRONOUS DRAM
APRIL 2006
KEY TIMING PARAMETERS
Parameter
-7
Unit
Clk Cycle Time
CAS
Latency = 3
CAS
Latency = 2
7
10
ns
ns
Clk Frequency
CAS
Latency = 3
CAS
Latency = 2
143
100
Mhz
Mhz
Access Time from Clock
CAS
Latency = 3
CAS
Latency = 2
5.4
6.5
ns
ns
IS45S81600B
4M x8x4 Banks
IS45S16800B
2M x16x4 Banks
54-pin TSOPII
54-pin TSOPII
相關PDF資料 |
PDF描述 |
|---|---|
| IS45S16800B-7TA | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TA1 | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TLA | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TLA1 | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S81600B | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS45S16800B-7TA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TLA1 | 功能描述:動態隨機存取存儲器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS45S16800B-7TLA1-TR | 功能描述:動態隨機存取存儲器 128M (8Mx16) 143MHz Automotive Temp RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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