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參數(shù)資料
型號(hào): IS61C1024-12JI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝: 0.300 INCH, PLASTIC, SOJ-32
文件頁數(shù): 1/11頁
文件大小: 80K
代理商: IS61C1024-12JI
IS61C1024
IS61C1024L
128K x 8 HIGH-SPEED
CMOS STATIC RAM
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
DESCRIPTION
The
ISSI
IS61C1024 and IS61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ISSIs high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C1024 and IS61C1024L are available in 32-pin
300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,
8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
CE2
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
FEATURES
High-speed access time: 12, 15, 20, 25 ns
Low active power: 600 mW (typical)
Low standby power: 500
μ
W (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (
±
10%) power supply
Low power version available: IS61C1024L
Commercial and industrial temperature ranges
available
MAY 1999
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
1
相關(guān)PDF資料
PDF描述
IS61C1024-12K 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-12KI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-12T 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-12TI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-15H RES POWER .030 OHM 2W 5% SMT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61C1024-12JR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
IS61C1024-12JRI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
IS61C1024-12K 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-12KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024-12KR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
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