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參數資料
| 型號： | IS61C1024-25TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 25 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP1-32 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 80K |
| 代理商： | IS61C1024-25TI |
IS61C1024
IS61C1024L
128K x 8 HIGH-SPEED
CMOS STATIC RAM
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
DESCRIPTION
The
ISSI
IS61C1024 and IS61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ISSIs high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C1024 and IS61C1024L are available in 32-pin
300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,
8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
CE2
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
FEATURES
High-speed access time: 12, 15, 20, 25 ns
Low active power: 600 mW (typical)
Low standby power: 500
μ
W (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (
±
10%) power supply
Low power version available: IS61C1024L
Commercial and industrial temperature ranges
available
MAY 1999
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
1
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C1024L | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024L-12HI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024L-15H | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024L-15J | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024L-15JI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61C1024AL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024AL-12HI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C1024AL-12HLI | 功能描述:靜態隨機存取存儲器 1M (128Kx8) 12ns 5V Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C1024AL-12HLI-TR | 功能描述:靜態隨機存取存儲器 1M (128Kx8) 12ns 5V Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C1024AL-12J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
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