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參數資料
| 型號： | IS61C256AH-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 |
| 封裝： | TSOP1-28 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 60K |
| 代理商： | IS61C256AH-10T |
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time: 10, 12, 15, 20, 25 ns
Low active power: 400 mW (typical)
Low standby power
— 250
μ
W (typical) CMOS standby
— 55 mW (typical) TTL standby
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V power supply
DESCRIPTION
The
ISSI
IS61C256AH is a very high-speed, low power,
32,768 word by 8-bit static RAMs. They are fabricated using
ISSI
's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields access times as fast as 10 ns maximum.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250
μ
W (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE
) input and an active LOW Output Enable (
OE
)
input. The active LOW Write Enable (
WE
) controls both writing
and reading of the memory.
The IS61C256AH is pin compatible with other 32K x 8 SRAMs
and are available in 28-pin PDIP, SOJ, and TSOP (Type I)
packages.
IS61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
MAY 1999
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
ISSI
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C256AH-12J | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12JI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12N | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12NI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-12T | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61C256AH12J | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C256AH-12J | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C256AH-12JI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin SOJ |
| IS61C256AH-12JI-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin SOJ T/R |
| IS61C256AH-12JL | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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