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參數資料
| 型號： | IS61C256AL-12TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 12 ns, PDSO28 |
| 封裝： | PLASTIC, TSOP1-28 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 107K |
| 代理商： | IS61C256AL-12TI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
10/23/06
1
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS61C256AL
FEATURES
High-speed access time: 10, 12 ns
CMOS Low Power Operation
— 1 mW (typical) CMOS standby
— 125 mW (typical) operating
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V power supply
Lead-free available
DESCRIPTION
The
ISSI
IS61C256AL is a very high-speed, low power,
32,768 word by 8-bit static RAMs. It is fabricated using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 10 ns maximum.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (
CE
) input and an active LOW Output
Enable (
OE
) input. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C256AL is pin compatible with other 32Kx8 SRAMs
and are available in 28-pin SOJ and TSOP (Type I)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
32K x 8 HIGH-SPEED CMOS STATIC RAM
OCTOBER 2006
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C256AL-12TL | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AL-12TLI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AL_06 | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AL | 32K X 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AL-10J | 32K X 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61C256AL-12TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AL-12TLI | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C256AL12TLITR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I T/R 制造商:ISSI 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I T/R |
| IS61C256AL-12TLI-TR | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C3216 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
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