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參數資料
| 型號： | IS61C3216AL-12KLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, SOJ-44 |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 90K |
| 代理商： | IS61C3216AL-12KLI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61C3216AL
FEATURES
High-speed access time: 12 ns
Low Active Power: 175 mW (typical)
Low Standby Power: 1 mW (typical)
CMOS standby
TTL compatible interface levels
Single 5V ± 10% power supply
Fully static operation: no clock or refresh
required
Available in 44-pin SOJ package and
44-pin TSOP (Type II)
Commercial and Industrial temperature ranges
available
Lead-free available
DESCRIPTION
The
ISSI
IS61C3216AL is high-speed, 512Kb static RAMs
organized as 32,768 words by 16 bits. They are fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS61C3216AL is packaged in the JEDEC standard 44-
pin 400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
SEPTEMBER 2005
A0-A14
CE
OE
WE
UB
LB
32K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
32K x 16 HIGH-SPEED CMOS STATIC RAM
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C3216AL-12T | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12TI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12TLI | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216B | 32K x 16 High-Speed CMOS Static RAM(32K x 16 高速CMOS靜態RAM) |
| IS61C3216 | 32K x 16 High-Speed CMOS Static RAM(32K x 16 高速CMOS靜態RAM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61C3216AL-12KLI-TR | 功能描述:靜態隨機存取存儲器 512K 32Kx16 12ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C3216AL-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C3216AL-12TI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61C3216AL-12TLI | 功能描述:靜態隨機存取存儲器 512K 32Kx16 12ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C3216AL-12TLI-TR | 功能描述:靜態隨機存取存儲器 512K 32Kx16 12ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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