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參數資料
| 型號： | IS61C64AL-10JI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 10 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 105K |
| 代理商： | IS61C64AL-10JI |
IS61C64AL
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/16/06
1
FEATURES
High-speed access time: 10 ns
CMOS low power operation
— 1 mW (typical) CMOS standby
— 125 mW (typical) operating
TTL compatible interface levels
Single 5V power supply
Fully static operation: no clock or refresh
required
Lead-free available
8K x 8 HIGH-SPEED CMOS STATIC RAM
DESCRIPTION
The
ISSI
IS61C64AL is a very high-speed, low power,
8192-word by 8-bit static RAM. It is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields access times as fast as 10 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using one Chip
Enable input,
CE
. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C64AL is packaged in the JEDEC standard 28-
pin, 300-mil SOJ, and TSOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A12
CE
OE
WE
8K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
MARCH 2006
相關PDF資料 |
PDF描述 |
|---|---|
| IS61C64AL-10JLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TLI | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64B | 8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C67-15N | 16K X 1 HIGH SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61C64AL-10JLI | 功能描述:靜態隨機存取存儲器 64K 8Kx8 10ns 5V Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C64AL-10JLI-TR | 功能描述:靜態隨機存取存儲器 64K 8Kx8 10ns 5V Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C64AL-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C64AL-10TLI | 功能描述:靜態隨機存取存儲器 64K 8Kx8 10ns 5V Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61C64AL-10TLI-TR | 功能描述:靜態隨機存取存儲器 64K 8Kx8 10ns 5V Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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