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參數(shù)資料
型號(hào)： IS61LF25672A-6.5B1I
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述： 256K X 72 CACHE SRAM, 6.5 ns, PBGA209
封裝： 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
文件頁(yè)數(shù)： 1/35頁(yè)
文件大小： 281K
代理商： IS61LF25672A-6.5B1I
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
04/21/06
1
ISSI
IS61LF25672A
IS61LF51236A
IS61LF102418A IS61VF102418A
IS61VF25672A
IS61VF51236A
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth expan-
sion
and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Power Supply
LF: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VF: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
JEDEC 100-Pin TQFP, 119-pin PBGA, 209-Ball
PBGA and 165-pin PBGA packages.
Lead-free available
APRIL 2006
256K x 72, 512K x 36, 1024K x 18
18Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
DESCRIPTION
The
ISSI
IS61LF/VF25672A, IS61LF/VF51236A and
IS61LF/VF102418A are high-speed, low-power synchro-
nous static
RAMs
designed to provide burstable,
high-
performance
memory for communication and networking
applications. The IS61LF/VF25672A is organized as
262,144 words by 72 bits. The IS61LF/VF51236A is orga-
nized as 524,288 words by 36 bits. The IS61LF/VF102418A
is organized as 1,048,576 words by 18 bits. Fabricated
with
ISSI
's advanced CMOS technology, the device inte-
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic cir-
cuit. All synchronous inputs pass through registers con-
trolled by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (
BWE
) input combined with one or more individual
byte write signals (
BWx
). In addition, Global Write (
GW
) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
相關(guān)PDF資料
PDF描述
IS61LF25672A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25672A-6.5B1 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2I 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LF409618B-6.5B2 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF409618B-6.5B2I 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF409618B-6.5B2L 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF409618B-6.5B2LI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF409618B-6.5B3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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