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參數資料
| 型號： | IS61LF6432A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 64K的× 32，64Kx36同步流動，通過靜態內存 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 101K |
| 代理商： | IS61LF6432A |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
08/25/05
1
IS61LF6436A
IS61LF6432A
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Interleaved or linear burst sequence control
using MODE input
Three chip enables for simple depth expansion
and address pipelining
Common data inputs and data outputs
Power-down control by ZZ input
JEDEC 100-Pin TQFP package
Power Supply:
+3.3V V
DD
+3.3V or 2.5V V
DDQ
Control pins mode upon power-up:
– MODE in interleave burst mode
– ZZ in normal operation mode
Industrial Temperature Available:
(-40
o
C to +85
o
C)
Lead-free available
DESCRIPTION
The
ISSI
IS61LF6432A and IS61LF6436A are high-speed,
low-power synchronous static RAM designed to provide a
burstable, high-performance, memory. IS61LF6432A is
organized as 65,536 words by 32 bits. IS61LF6436A is
organized as 65,536 words by 36 bits. They are fabricated
with
ISSI
's advanced CMOS technology. The device inte-
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BWa
controls DQa,
BWb
controls DQb,
BWc
controls DQc,
BWd
controls DQd, conditioned by
BWE
being LOW. A
LOW on
GW
input would cause all bytes to be written.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61LF6432A/36A and controlled by the
ADV
(burst address advance) input pin.
The mode pin is used to select the burst sequence order.
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
64K x 32, 64Kx36
SYNCHRONOUS FLOW-THROUGH
STATIC RAM
OCTOBER 2005
FAST ACCESS TIME
Symbol
Parameter
8.5
Unit
t
KQ
Clock Access Time
8.5
ns
t
KC
Cycle Time
11
ns
Frequency
90
MHz
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LF6432A-8.5TQI | 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6432A-8.5TQLI | 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6436A | 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6436A-8.5TQI | 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6436A-8.5TQLI | 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LF6432A-8.5TQI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LF6432A-8.5TQLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6436A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF6436A-8.5TQI | 功能描述:靜態隨機存取存儲器 2Mb 64Kx36 8.5ns Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LF6436A-8.5TQI-TR | 功能描述:靜態隨機存取存儲器 2Mb 64Kx36 8.5ns Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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