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參數資料
| 型號： | IS61LPD51236A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 為512k × 36，1024K × 18 18MB的同步流水線，雙循環取消選擇靜態RAM |
| 文件頁數： | 1/29頁 |
| 文件大?。?/td> | 219K |
| 代理商： | IS61LPD51236A |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
02/03/06
ISSI
IS61VPD51236A IS61VPD102418A
IS61LPD51236A IS61LPD102418A
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Double cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Power Supply
LPD: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VPD: VDD 2.5V + 5%, VDDQ 2.5V + 5%
JEDEC 100-Pin TQFP and 165-pin PBGA
package
Lead-free available
DESCRIPTION
The
ISSI IS61LPD/VPD51236A and IS61LPD/
VPD102418A are high-speed, low-power synchronous static
RAMsdesignedtoprovideburstable,high-performance memory
for communication and networking applications. The
IS61LPD/VPD51236A is organized as 524,288 words by 36
bits, and the IS61LPD/VPD102418A is organized as
1,048,576 words by 18 bits. Fabricated with
ISSI's ad-
vanced CMOS technology, the device integrates a 2-bit
burst counter, high-speed SRAM core, and high-drive capa-
bility outputs into a single monolithic circuit. All synchro-
nous inputs pass through registers controlled by a positive-
edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to four
bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (
BWE) input combined with one or more
individual byte write signals (
BWx). In addition, Global
Write (
GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either
ADSP (Address Status
Processor) or
ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
512K x 36, 1024K x 18
18Mb SYNCHRONOUS PIPELINED,
DOUBLE CYCLE DESELECT STATIC RAM
FEBRUARY 2006
FAST ACCESS TIME
Symbol
Parameter
250
200
Units
tKQ
Clock Access Time
2.6
3.1
ns
tKC
Cycle Time
4
5
ns
Frequency
250
200
MHz
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LPS102418A | 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200B2I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200B3 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200B3I | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS12832A-200TQ | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LPD51236A-200B3 | 功能描述:靜態隨機存取存儲器 18Mb 512Kx36 200MHz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPD51236A-200B3I | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,512K x 36,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPD51236A-200B3I-TR | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,512K x 36,200MHz,3.3V or 2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPD51236A-200B3-TR | 功能描述:靜態隨機存取存儲器 18Mb 512Kx36 200MHz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPD51236A-200TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
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