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參數(shù)資料
| 型號： | IS61LPS51218A-200TQ2I |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 3.1 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 1/32頁 |
| 文件大小： | 217K |
| 代理商： | IS61LPS51218A-200TQ2I |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/29/05
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61VPS25636A IS61LPS25636A
IS61VPS51218A IS61LPS51218A
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Single cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Power Supply
LPS: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VPS: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
JEDEC 100-Pin TQFP, 119-ball PBGA, and
165-ball PBGA packages
Lead-free available
DESCRIPTION
The
ISSI
IS61LPS/VPS25636A and IS61LPS/
VPS51218A are high-speed, ow-power synchronous static
RAMs
designed to provide burstable,
high-performance
memory
for communication and networking applications. The
IS61LPS/VPS25636A is organized as 262,144 words by
36 bits and the IS61LPS/VPS51218A is organized as
524,288 words by 18 bits. Fabricated with
ISSI
's ad-
vanced CMOS technology, the device integrates a 2-bit
burst counter, high-speed SRAM core, and high-drive
capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (
BWE
) input combined with one or more
individual byte write signals (
BWx
). In addition, Global
Write (
GW
) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
256K x 36, 512K x 18
9 Mb SYNCHRONOUS PIPELINED,
SINGLE CYCLE DESELECT STATIC RAM
MAY 2005
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
250
2.6
4
250
200
3.1
5
200
Units
ns
ns
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LPS51218A-200TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-200TQLI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS51218A-250B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LPS51218A-200TQI | 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-200TQI-TR | 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-200TQLI | 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-200TQLI-TR | 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx18 200Mhz Sync 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LPS51218A-250B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
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