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參數資料
| 型號： | IS61LV10248-10BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 1M X 8 STANDARD SRAM, 10 ns, PBGA36 |
| 封裝： | 9 X 11 MM, MINI, BGA-36 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 123K |
| 代理商： | IS61LV10248-10BI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
1
IS61LV10248
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
1M x 8 HIGH-SPEED CMOS STATIC RAM
APRIL 2006
FEATURES
High-speed access times:
8, 10 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
–
48-ball miniBGA (9mm x 11mm
)
– 36-ball miniBGA
(9mm x 11mm)
– 44-pin TSOP (Type II)
Lead-free available
DESCRIPTION
The
ISSI
IS61LV10248 is a very high-speed, low power,
1M-word by 8-bit CMOS static RAM. The IS61LV10248 is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and
low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61LV10248 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV10248 is available in 48 ball mini BGA, 36-ball
mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
CE
OE
WE
1M X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV10248-10BLI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10MI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10T | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10TI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10TLI | 1M x 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LV10248-10BI-TR | 功能描述:靜態隨機存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10BLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV10248-10T | 功能描述:靜態隨機存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV10248-10TI | 功能描述:靜態隨機存取存儲器 8Mb 1Mb x 8 10ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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