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參數資料
| 型號： | IS61LV12816L-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 112K |
| 代理商： | IS61LV12816L-10T |
IS61LV12816L
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
1
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
FEATURES
High-speed access time: 8, 10 ns
Operating Current: 50mA (typ.)
Stand by Current: 700μA (typ.)
TTL and CMOS compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS61LV12816L is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS61LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
OCTOBER 2005
A0-A16
CE
OE
WE
UB
LB
128Kx16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV12816L-10TI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-10TL | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-10TLI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-8BI | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816L-8T | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LV12816L-10TI | 功能描述:靜態隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TI-TR | 功能描述:靜態隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TL | 功能描述:靜態隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TLI | 功能描述:靜態隨機存取存儲器 2Mb 128Kx16 10ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12816L-10TLI/U918 | 制造商:Integrated Silicon Solution Inc 功能描述:ISNIS61LV12816L-10TLI/U918 2MB,HIGH-SPEE |
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