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參數資料
| 型號： | IS61LV256-12T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 12 ns, PDSO28 |
| 封裝： | 0.450 INCH, PLASTIC, TSOP1-28 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 100K |
| 代理商： | IS61LV256-12T |
ISSI
IS61LV256
IS61LV256
32K x 8 LOW VOLTAGE CMOS STATIC RAM
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
2-1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1996, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time: 12, 15, 20, 25 ns
Automatic power-down when chip is deselected
CMOS low power operation
— 345 mW (max.) operating
— 7 mW (max.) CMOS standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three-state outputs
DESCRIPTION
The
ISSI
IS61LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 12 ns maximum.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50
μ
W (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE
). The active LOW Write Enable (
WE
) controls
both writing and reading of the memory.
The IS61LV256 is available in the JEDEC standard 28-pin,
300-mil DIP and SOJ, plus the 450-mil TSOP package.
FEBRUARY 1996
ISSI
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
256 X 1024
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV256-15J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LV256-12TI | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-12TI-TR | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-12TLI | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-12TLI-TR | 功能描述:靜態隨機存取存儲器 256K 32Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256-12T-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I T/R |
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