欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IS61LV3216
廠商: Integrated Silicon Solution, Inc.
英文描述: 32K x 16 LOW VOLTAGE CMOS STATIC RAM
中文描述: 32K的× 16低電壓CMOS靜態RAM
文件頁數: 1/8頁
文件大小: 70K
代理商: IS61LV3216
IS61LV3216
32K x 16 LOW VOLTAGE CMOS STATIC RAM
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time: 10, 12, 15, and 20 ns
CMOS low power operation
— 150 mW (typical) operating
— 150 μW (typical) standby
TTL compatible interface levels
Single 3.3V ± 10% power supply
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type 2)
DESCRIPTION
The
ISSI
IS61LV3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields fast access times with low power consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.A
data byte allows Upper Byte (
UB
) and Lower Byte (
LB
) access.
The IS61LV3216 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type 2).
FUNCTIONAL BLOCK DIAGRAM
NOVEMBER 1997
A0-A14
CE
OE
WE
UB
LB
32K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關PDF資料
PDF描述
IS61LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-10MLI 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-8TL 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV51216-12TA3 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
相關代理商/技術參數
參數描述
IS61LV3216-10K 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-12K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM
IS61LV3216-12KI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM
IS61LV3216-12T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM
主站蜘蛛池模板: 鄄城县| 前郭尔| 吉林省| 封开县| 扎鲁特旗| 榕江县| 行唐县| 渭南市| 青神县| 商河县| 浦东新区| 墨江| 杂多县| 兰考县| 通州区| 麻城市| 乾安县| 佛冈县| 阿拉善盟| 随州市| 巩留县| 福鼎市| 紫金县| 佛学| 九台市| 文成县| 都江堰市| 泰来县| 东至县| 泰宁县| 泌阳县| 营山县| 佛山市| 三门峡市| 赤壁市| 博客| 同德县| 揭阳市| 石家庄市| 鄯善县| 伽师县|