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參數(shù)資料
| 型號： | IS61LV3216L-20KI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IS61LV3216L-20KI |
FEATURES
High-speed access time: 10, 12, 15, and 20 ns
CMOS low power operation
— 130 mW (typical) operating
— 150 μW (typical) standby
TTL compatible interface levels
Single 3.3V + 10%, –5% power supply for 10
and 12 ns
Single 3.3V ± 10% power supply for 15
and 20 ns
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type II)
IS61LV3216L
32K x 16 LOW VOLTAGE CMOS STATIC RAM
DESCRIPTION
The
ISSI
IS61LV3216L is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields fast access times with low power consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.A
data byte allows Upper Byte (
UB
) and Lower Byte (
LB
) access.
The IS61LV3216L is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
DECEMBER 2000
ISSI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
A0-A14
CE
OE
WE
UB
LB
32K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
1
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PDF描述 |
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| IS61LV3216L-20T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-20TI | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-10K | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-10T | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV3216L-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV3216L-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV51216 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV51216-10M | 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MI | 功能描述:靜態(tài)隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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