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參數資料
| 型號： | IS61LV51216-10MI |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| 中文描述： | 為512k × 16高速異步 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 101K |
| 代理商： | IS61LV51216-10MI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/10/05
1
IS61LV51216
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time:
— 8, 10, and 12 ns
CMOS low power operation
Low stand-by power:
— Less than 5 m
A
(typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
512K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS61LV51216 is a high-speed, 8M-bit static RAM
organized as 525,288 words by 16 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields high-performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory. A data
byte allows Upper Byte (
UB
) and Lower Byte (
LB
) access.
The IS61LV51216 is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
FUNCTIONAL BLOCK DIAGRAM
MARCH 2005
A0-A18
CE
OE
WE
UB
LB
512K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV51216-10T | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-10TI | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-10TLI | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-12T | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-12TI | 512K x 16 HIGH SPEED ASYNCHRONOUS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LV51216-10MI-TR | 功能描述:靜態隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MLI | 功能描述:靜態隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10MLI-TR | 功能描述:靜態隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10M-TR | 功能描述:靜態隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10T | 功能描述:靜態隨機存取存儲器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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