- 您現在的位置：買賣IC網 > PDF目錄360988 > IS61LV6424-10TQ 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY PDF資料下載
參數資料
| 型號： | IS61LV6424-10TQ |
| 英文描述： | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 64K的× 24 HIGH-SPEED的CMOS靜態RAM為3.3V電源 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 138K |
| 代理商： | IS61LV6424-10TQ |
IS61LV6424
Integrated Circuit Solution Inc.
AHSR012-0D
S2-97
1
2
3
4
5
6
7
8
9
10
11
12
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
(9, 10 ns)
3.3V + 10%, – 5%
3.3V + 10%, – 5%
V
CC
(12, 15 ns)
3.3V ± 10%
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width
≤
2.0 ns).
V
IH
(max.) = V
CC
+ 0.3V DC; V
IH
(max.) = V
CC
+ 2.0V AC (pulse width
≤
2.0 ns).
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Value
–0.5 to 5.0
–0.5 to Vcc + 0.5
–65 to + 150
–10 to + 85
–45 to + 90
2.0
±20
Unit
V
V
°C
°C
°C
W
mA
Com.
Ind.
P
T
I
OUT
Power Dissipation
DC Output Current
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode
CE1
CE2
OE
WE
V/
S
I/O0-I/O23
Vcc Current
Not Selected
H
X
L
L
L
L
L
X
H
H
H
H
H
H
X
X
L
L
X
X
H
X
X
H
H
L
L
H
X
X
H
L
H
L
X
High-Z
High-Z
D
OUT
D
OUT
D
IN
D
IN
High-Z
ISB1, ISB2
Read Using X/
Y
Read Using A15
Write Using X/
Y
Write Using A15
Output Disable
I
CC
I
CC
I
CC
I
CC
I
CC
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV6424-12TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-15TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-9TQ | 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6432-117TQI | 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM |
| IS61LV6432-133PQ | 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LV6424-10TQI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
| IS61LV6424-12TQ | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-15TQ | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV6424-15TQI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
| IS61LV6424-9TQ | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
發布緊急采購，3分鐘左右您將得到回復。