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參數資料
| 型號： | IS61NLP25618-5TQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | PIPELINE NO WAIT STATE BUS SRAM |
| 中文描述： | 256K X 18 ZBT SRAM, 5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 154K |
| 代理商： | IS61NLP25618-5TQ |
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00C
11/30/00
1
IS61NP12832
IS61NLP12832 IS61NLP12836 IS61NLP25618
ISSI
128K x 32, 128K x 36 and 256K x 18
PIPELINE 'NO WAIT' STATE BUS SRAM
IS61NP12836
IS61NP25618
FEATURES
100 percent bus utilization
No wait cycles between Read and Write
Internal self-timed write cycle
Individual Byte Write Control
Single R/W (Read/Write) control pin
Clock controlled, registered address,
data and control
Interleaved or linear burst sequence control
using MODE input
Three chip enables for simple depth expansion
and address pipelining for TQFP
Power Down mode
Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
JEDEC 100-pin TQFP, 119 PBGA package
Single +3.3V power supply (± 5%)
NP Version: 3.3V I/O Supply Voltage
NLP Version: 2.5V I/O Supply Voltage
Industrial temperature available
DESCRIPTION
The 4 Meg 'NP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
network and communications customers. They are
organized as 131,072 words by 32 bits, 131,072 words
by 36 bits and 262,144 words by 18 bits, fabricated with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE
is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when
WE
is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
PRELIMINARY INFORMATION
OCTOBER 2000
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-150*
3.8
6.7
150
-133
4.2
7.5
133
-100
5
10
100
Units
ns
ns
MHz
*This speed available only in NP version
相關PDF資料 |
PDF描述 |
|---|---|
| IS61NLP25618-5TQI | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP12832 | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP12832-133B | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP12832-150B | PIPELINE NO WAIT STATE BUS SRAM |
| IS61NP12832-150TQ | PIPELINE NO WAIT STATE BUS SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61NLP25618A-200B3I | 功能描述:靜態隨機存取存儲器 4M (256Kx18) 200MHz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NLP25618A-200B3I-TR | 功能描述:靜態隨機存取存儲器 4M (256Kx18) 200MHz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NLP25618A-200B3LI | 功能描述:靜態隨機存取存儲器 4M (256Kx18) 200MHz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NLP25618A-200B3LI-TR | 功能描述:靜態隨機存取存儲器 4M (256Kx18) 200MHz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NLP25618A-200TQI | 功能描述:靜態隨機存取存儲器 4Mb 256Kx18 200Mhz Sync 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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