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參數資料
| 型號： | IS61SF25618-8.5TQ |
| 英文描述： | x18 Fast Synchronous SRAM |
| 中文描述： | x18快速同步SRAM |
| 文件頁數： | 8/16頁 |
| 文件大?。?/td> | 108K |
| 代理商： | IS61SF25618-8.5TQ |
IS61SF25616
IS61SF25618
ISSI
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 2
Figure 1
Output
Buffer
Z
O
= 50
1.5V
50
30 pF
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
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| IS61SF51218T-10TQ | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 8M-Bit 512K x 16 10ns 100-Pin TQFP |
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