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參數資料
| 型號： | IS61SP12836-3.5TQ |
| 英文描述： | x36 Fast Synchronous SRAM |
| 中文描述： | x36快速同步SRAM |
| 文件頁數： | 8/16頁 |
| 文件大小： | 108K |
| 代理商： | IS61SP12836-3.5TQ |
IS61SF25616
IS61SF25618
ISSI
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 2
Figure 1
Output
Buffer
Z
O
= 50
1.5V
50
30 pF
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
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| IS61SP12836-3.8B | x36 Fast Synchronous SRAM |
| IS61SP12836-3.8TQ | x36 Fast Synchronous SRAM |
| IS61SP12836-3.8TQI | x36 Fast Synchronous SRAM |
| IS61SP12836-5B | x36 Fast Synchronous SRAM |
| IS61SP12836-5TQ | x36 Fast Synchronous SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61SP6464-100PQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61SP6464100TQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61SP6464-100TQ | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 4M-Bit 64K x 64 5ns 128-Pin TQFP |
| IS61SP6464-6TQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61VF102418A-6.5B3 | 功能描述:靜態隨機存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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