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參數資料
| 型號： | IS61VPD10018-200BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 3.1 ns, PBGA119 |
| 封裝： | PLASTIC, BGA-119 |
| 文件頁數： | 1/24頁 |
| 文件大小： | 168K |
| 代理商： | IS61VPD10018-200BI |
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
ADVANCE INFORMATION
Rev. 00B
09/25/01
This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best
possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
IS61VPD51232 IS61VPD51236 IS61VPD10018
ISSI
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Linear burst sequence control using MODE input
Three chip enable option for simple depth expansion
and address pipelining
Common data inputs and data outputs
JEDEC 100-Pin TQFP and
119-pin PBGA package
Single +2.5V, ±5% operation
Auto Power-down during deselect
Double cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
DESCRIPTION
The
ISSI IS61VPD51232, IS61VPD51236, and
IS61VPD10018 are high-speed, low-power synchronous
static RAMs designed to provide burstable, high-performance
memory for communication and networking applications.
The IS61VPD51232 is organized as 524,288 words by 32 bits
and the IS61VPD51236 is organized as 524,288 words by
36 bits. The IS61VPD10018 is organized as 1,048,576
words by 18 bits. Fabricated with
ISSI's advanced CMOS
technology, the device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit. All synchronous inputs
pass through registers controlled by a positive-edge-
triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (
BWE).input combined with one or more individual
byte write signals (
BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either
ADSP (Address Status
Processor) or
ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
512K x 32, 512K x 36, 1024K x 18
SYNCHRONOUS PIPELINED,
DOUBLE CYCLE DESELECT STATIC RAM
ADVANCE INFORMATION
SEPTEMBER 2001
FAST ACCESS TIME
Symbol
Parameter
-200
-166
Units
tKQ
Clock Access Time
3.1
3.5
ns
tKC
Cycle Time
5
6
ns
Frequency
200
166
MHz
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61VPD102418A-200B3 | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VPD102418A-200B3I | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VPD102418A-200B3I-TR | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VPD102418A-200B3-TR | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,2.5V I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VPD102418A-200TQI | 功能描述:靜態隨機存取存儲器 18Mb,Pipeline,Sync,1Mb x 18,200MHz,2.5V I/O,100 Pin TQFP RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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