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參數(shù)資料
型號: IS62C1024-45TI
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K的× 8高速CMOS靜態(tài)RAM
文件頁數(shù): 7/8頁
文件大小: 423K
代理商: IS62C1024-45TI
Integrated Circuit Solution Inc.
7
SR016-0B
IS62C1024
WRITE CYCLE NO. 2 (
CE1
, CE2 Controlled)
(1,2)
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
Notes:
1. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
= V
IH
.
相關(guān)PDF資料
PDF描述
IS62C1024-55QI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL-35Q 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024AL-35QI 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024AL-35QLI 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024AL-35T 128K x 8 LOW POWER CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62C1024-45W 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45WI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55Q 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55QI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
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