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參數資料
型號: IS62C1024-55QI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K X 8 STANDARD SRAM, 55 ns, PDSO32
封裝: PLASTIC, SOP-32
文件頁數: 6/8頁
文件大小: 423K
代理商: IS62C1024-55QI
6
Integrated Circuit Solution Inc.
SR016-0B
IS62C1024
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range, Standard and Low
Power)
-35
-45
-55
-70
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time
35
45
55
70
ns
t
SCE
1
CE1
to Write End
25
35
50
60
ns
t
SCE
2
CE2 to Write End
25
35
50
60
ns
t
AW
Address Setup Time to Write End
25
35
45
60
ns
t
HA
Address Hold from Write End
0
0
0
0
ns
t
SA
Address Setup Time
0
0
0
0
ns
t
PWE
(4)
WE
Pulse Width
25
35
40
50
ns
t
SD
Data Setup to Write End
20
25
25
30
ns
t
HD
Data Hold from Write End
0
0
0
0
ns
t
HZWE
(2)
WE
LOW to High-Z Output
10
15
20
25
ns
t
LZWE
(2)
WE
HIGH to Low-Z Output
3
5
5
5
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
相關PDF資料
PDF描述
IS62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816L 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-100B 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-100BI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-100T 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
相關代理商/技術參數
參數描述
IS62C1024-55T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55W 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55WI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-70Q 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin SOP
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