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參數資料
| 型號： | IS62C1024AL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K的× 8低功耗CMOS靜態RAM |
| 文件頁數： | 1/8頁 |
| 文件大小： | 423K |
| 代理商： | IS62C1024AL |
Integrated Circuit Solution Inc.
1
SR016-0B
IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
DESCRIPTION
The
ICSI
IS62C1024 is a low power,131,072-word by 8-bit
CMOS static RAM. It is fabricated using
ICSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS62C1024 is available in 32-pin 600mil DIP, 450mil SOP
and 8*20mm TSOP-1 packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
CE2
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
FEATURES
High-speed access time: 35, 45, 55, 70 ns
Low active power: 450 mW (typical)
Low standby power: 500 μW (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (±10%) power supply
相關PDF資料 |
PDF描述 |
|---|---|
| IS62C1024-35QI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS62C1024-55QI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS62LV12816LL | 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816L | 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62LV12816LL-100B | 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62C1024AL-35Q | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62C1024AL-35QI | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-35QI-TR | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-35QLI | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-35QLI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM 1MB 128K X 8 5V 35NS 61C1024 |
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