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參數資料
| 型號： | IS62LV25616LL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 Low Voltage, Ultra Low Power CMOS SRAM(256K x 16 低壓，極低功耗CMOS靜態RAM) |
| 中文描述： | 256K × 16低電壓，超低功耗CMOS SRAM（256K × 16低壓，極低功耗的CMOS靜態RAM）的 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 91K |
| 代理商： | IS62LV25616LL |
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00C
11/30/00
1
IS62LV25616LL
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
ISSI
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best
possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time: 70 and 85 ns
CMOS low power operation
– 135 mW (typical) operating
– 16.5 μW (typical) CMOS standby
TTL compatible interface levels
Single 2.7V-3.3V V
CC
power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Available in the 44-pin TSOP (Type II) and
48-pin mini BGA
(8mm x 10mm and 7.2mm x 8.7mm)
DESCRIPTION
The
ISSI
IS62LV25616LL is high-speed, 4,194,304 bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When
CE
s HIGH (deselected) or when
CE
s ow and both
LB
and
UB
are HIGH, the device assumes a standby mode at which the
power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory. A data byte
allows Upper Byte (
UB
) and Lower Byte (
LB
) access.
The IS62LV25616LL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (8mm x 10mm
and 7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
PRELIMINARY INFORMATION
NOVEMBER 2000
A0-A17
CE
OE
WE
UB
LB
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關PDF資料 |
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|---|---|
| IS62LV2568LL | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-70B | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-70BI | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-85T | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| IS62LV2568LL-85TI | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62LV25616LL-70B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV25616LL-70BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV25616LL-70M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV25616LL-70MI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62LV25616LL-70T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
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