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參數(shù)資料
型號: IS62LV256L-25JI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 32K x 8 LOW VOLTAGE CMOS STATIC RAM
中文描述: 32K X 8 STANDARD SRAM, 25 ns, PDSO28
封裝: 0.300 INCH, PLASTIC, SOJ-28
文件頁數(shù): 1/7頁
文件大小: 52K
代理商: IS62LV256L-25JI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
FEATURES
High-speed access time: 15, 20, 25 ns
Automatic power-down when chip is deselected
CMOS low power operation
— 255 mW (max.) operating
— 0.18 mW (max.) CMOS standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three-state outputs
DESCRIPTION
The
ISSI
IS62LV256L is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 15 ns maximum.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50
μ
W (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE
). The active LOW Write Enable (
WE
) controls
both writing and reading of the memory.
The IS62LV256L is available in the JEDEC standard 28-pin
SOJ and the 450-mil TSOP package.
IS62LV256L
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
256 X 1024
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
APRIL 1999
Integrated Silicon Solution, Inc.
SR033-1A
04/27/99
1
ISSI
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62LV256L-25T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM
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