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參數資料
| 型號： | IS62VV51216LL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K x 16 Low Voltage, 1.8V Ultra Low Power CMOS SRAM(1.8V, 512K x 16 低壓，極低功耗CMOS靜態RAM) |
| 中文描述： | 為512k × 16低電壓，1.8V的超低功耗CMOS SRAM（1.8伏，低壓為512k × 16，極低功耗的CMOS靜態RAM）的 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 87K |
| 代理商： | IS62VV51216LL |
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00B
01/10/01
1
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS62VV51216LL
512K x 16 LOW VOLTAGE, 1.8V ULTRA
LOW POWER CMOS STATIC RAM
ISSI
FEATURES
High-speed access time: 70, 85 ns
CMOS low power operation
– 36 mW (typical) operating
– 9 μW (typical) CMOS standby
TTL compatible interface levels
Single 1.65V-1.95V V
CC
power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Available in 48-pin mini BGA (7.2mm x 8.7mm)
DESCRIPTION
The
ISSI
IS62VV51216LL is a high-speed, 8M bit static
RAMs organized as 512K words by 16 bits. It is fabricated
using
ISSI
's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
For the IS62VV51216LL, when
CS1
is HIGH (deselected)
or when CS2 is LOW (deselected) or when
CS1
is LOW,
CS2 is HIGH and both
LB
and
UB
are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory. A
data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS62VV51216LL is packaged in the JEDEC standard
48-pin mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
PRELIMINARY INFORMATION
DECEMBER 2000
A0-A18
CS1
OE
WE
UB
LB
512K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62WV102416ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS62WV102416ALL-35MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS62WV102416ALL-35MLI | 功能描述:靜態隨機存取存儲器 16M (1Mx16) 35ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV102416ALL-35MLI-TR | 功能描述:靜態隨機存取存儲器 16M (1Mx16) 35ns Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV102416ALL-35TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
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