- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377571 > IS62WV20488BLL-25TI (INTEGRATED SILICON SOLUTION INC) 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS62WV20488BLL-25TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 25 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 120K |
| 代理商： | IS62WV20488BLL-25TI |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/21/06
1
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS62WV20488ALL
IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER
CMOS STATIC RAM
PRELIMINARY INFORMATION
JULY 2006
FEATURES
High-speed access times:
25, 35 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single power supply
–
V
DD
1.65V to 2.2V (IS62WV20488ALL)
speed = 35ns for Vcc = 1.65V to 2.2V
–
V
DD
2.4V to 3.6V (IS62WV20488BLL)
speed = 25ns for Vcc = 2.4V to 3.6V
Packages available:
–
48-ball miniBGA (9mm x 11mm
)
– 44-pin TSOP (Type II)
Industrial Temperature Support
Lead-free available
DESCRIPTION
The
ISSI
IS62WV20488ALL/BLL is a high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The
IS62WV20488ALL/BLL is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
The IS62WV20488ALL/BLL operates from a single
power supply and all inputs are TTL-compatible.
The IS62WV20488ALL/BLL is available in 48 ball mini
BGA and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A20
CS1
CS2
OE
WE
2M X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV20488BLL-25TLI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV25616ALL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70BI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70T | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV20488BLL-25TLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25TLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70BI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV25616ALL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。