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參數(shù)資料
| 型號： | IS62WV51216BLL-70XI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 512K X 16 STANDARD SRAM, 70 ns, UUC |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 137K |
| 代理商： | IS62WV51216BLL-70XI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
02/24/05
1
IS62WV51216ALL
IS62WV51216BLL
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
512K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
– 36 mW (typical) operating
– 12 μW (typical) CMOS standby
TTL compatible interface levels
Single power supply
– 1.65V--2.2V V
DD
(62WV51216ALL)
– 2.5V--3.6V V
DD
(62WV51216BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
DESCRIPTION
The
ISSI
IS62WV51216ALL/ IS62WV51216BLL are high-
speed, 8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (
LB)
access.
The IS62WV51216ALL and IS62WV51216BLL are packaged
in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm)
and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
FEBRUARY 2005
A0-A18
CS1
OE
WE
UB
LB
512K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV5128BLL-70T2 | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL-70TI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70H | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70HI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV51216EBLL-45BLI | 功能描述:IC SRAM 8MB LP 45NS 48MBGA 制造商:issi, integrated silicon solution inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:8M（512K x 16） 速度:45ns 接口:并聯(lián) 電壓 - 電源:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:48-VFBGA 供應(yīng)商器件封裝:48-VFBGA（6x8） 標(biāo)準(zhǔn)包裝:480 |
| IS62WV51216EBLL-45TLI | 功能描述:IC SRAM 8MB LP 45NS 44TSOP 制造商:issi, integrated silicon solution inc 系列:- 包裝:管件 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:8M（512K x 16） 速度:45ns 接口:并聯(lián) 電壓 - 電源:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 封裝/外殼:44-TSOP（0.400"，10.16mm 寬） 供應(yīng)商器件封裝:44-TSOP II 標(biāo)準(zhǔn)包裝:135 |
| IS62WV5128ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70H | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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