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| 型號(hào)： | IS62WV6416BLL-55B2I |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大小： | 116K |
| 代理商： | IS62WV6416BLL-55B2I |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/05
1
IS62WV6416ALL
IS62WV6416BLL
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation:
30 mW (typical) operating
15 μW (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.7V--2.2V V
DD
(62WV6416ALL)
2.5V--3.6V V
DD
(62WV6416BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
2CS Option Available
Lead-free available
DESCRIPTION
The
ISSI
IS62WV6416ALL/ IS62WV6416BLL are high-
speed, 1M bit static RAMs organized as 64K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory. A
data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS62WV6416ALL and IS62WV6416BLL are packaged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
JUNE 2005
A0-A15
CS1
OE
WE
UB
LB
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CS2
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| IS62WV6416BLL-55BI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55BLI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55TI | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV6416BLL-55BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55BLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV6416BLL-55BLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV6416BLL-55TI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 55ns 2.5v-3.6v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV6416BLL-55TI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 55ns 2.5v-3.6v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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