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參數資料
| 型號： | IS63LV1024-8K |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| 中文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, MS-027, SOJ-32 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 68K |
| 代理商： | IS63LV1024-8K |
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS63LV1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. H
10/02/00
1
FEATURES
High-speed access times:
8, 10, 12 and 15 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
DESCRIPTION
The
ISSI
IS63LV1024 is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAM in revolutionary
pinout. The IS63LV1024 is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 μW (typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE
OE
WE
128K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
SEPTEMBER 2000
相關PDF資料 |
PDF描述 |
|---|---|
| IS63LV1024-8KI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024-8T | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024-8TI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024-10TI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024-12J | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS63LV1024-8KI | 功能描述:靜態隨機存取存儲器 1Mb 128Kx8 8ns 3.3v Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024-8KI-TR | 功能描述:靜態隨機存取存儲器 1Mb 128Kx8 8ns 3.3v Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024-8KL | 功能描述:靜態隨機存取存儲器 1Mb 128Kx8 8ns 3.3v Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024-8KL-TR | 功能描述:靜態隨機存取存儲器 1Mb 128Kx8 8ns 3.3v Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024-8T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 8ns 32-Pin TSOP-II |
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