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參數資料
| 型號： | IS63WV1024BLL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K的× 8高速CMOS靜態RAM |
| 文件頁數： | 1/17頁 |
| 文件大小： | 135K |
| 代理商： | IS63WV1024BLL |
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/10/06
1
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS63WV1024BLL
IS64WV1024BLL
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V – 3.6V
High-performance, low-power CMOS process
CMOS Low Power Operation
50 mW (typical) operating current
25
μ
W (typical) standby current
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Packages available:
– 32-pin TSOP (Type II)
– 32-pin sTSOP (Type I)
– 48-Ball miniBGA (6mm x 8mm)
– 32-pin 300-mil SOJ
Lead-free available
DESCRIPTION
The
ISSI
IS63/64WV1024BLL is a very high-speed, low
power, 131,072-word by 8-bit CMOS static RAM. The
IS63/64WV1024BLL is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 25 μW (typical) with CMOS input levels.
The IS63/64WV1024BLL operates from a single V
DD
power supply. The IS63/64WV1024BLL is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE
OE
WE
128K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
MAY 2006
相關PDF資料 |
PDF描述 |
|---|---|
| IS63WV1024BLL-12BI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12HI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12HLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12JI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS63WV1024BLL-12BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 功能描述:靜態隨機存取存儲器 1M (128Kx8) 12ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63WV1024BLL-12BLI-TR | 功能描述:靜態隨機存取存儲器 1M (128Kx8) 12ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63WV1024BLL-12HI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12HLI | 功能描述:靜態隨機存取存儲器 1Mb 128Kx8 12ns/3.3V Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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